Tc4w66fu datasheet 2n3904

2N3904 *MMBT3904 **PZT3904 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W 2N3904 MMBT3904 PZT3904 EBC TO-92 SOT-23 SOT-223 Mark:1A C B E E B C C 2N6004 Datasheet (PDF) 5.1. l2n600.pdf Size:395K _lrc LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), [email protected], [email protected] = 3.8Ω We declare that the material of product compliance with RoHS requirements. 2N2905 Low Power Bipolar Transistors Page 2 07/04/06 V1.0 Absolute Maximum Ratings Description Symbol Value Unit Collector Emitter Voltage VCEO 40 Collector Base Voltage CBO 60V Emitter Base Voltage VEBO 5 Collector Current Continuous IC 600 mA Power Dissipation at Ta = 25°C Derate Above 25°C PD 600 3.43 mW mW/°C Power Dissipation at TC = 25 ... 2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.